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Enhancing Energy Storage Density of NBT-Based Ceramics at Low Electric Fields via Synergistic Doping and Microstructural Optimization

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Abstract

The increasing demand for high-performance energy storage materials has led to a focus on relaxor ferroelectric (RFE) ceramics, which offer high energy storage density and excellent thermal stability. In this study, a novel (1–x)(Na0.5Bi0.5)TiO3–xSr0.6Bi0.2Ca0.1(Ti0.5Zr0.5)O3 ((1-x)NBT-xSBCTZ) ceramic system was designed to enhance energy storage performance at low electric fields. The ceramics were synthesized using a conventional solid-state reaction method and characterized through X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and dielectric measurements. The results revealed that doping with Sr0.7Ca0.3TiO3-based compounds improved the sintering process, refined grain sizes, and enhanced dielectric breakdown strength. At an electric field of 290 kV/cm, the ceramics exhibited Wrec of 4.1 J/cm3 and η of 75.1%, demonstrating the effectiveness of the doping strategy. These values are competitive with, and in many cases superior to, those reported for other NBT-based systems under similar field strengths, which typically show Wrec values of 2.5–3.8 J/cm3 and η below 70%. Additionally, the ceramics displayed excellent frequency and temperature stability, making them suitable for a wide range of applications in low-power devices and pulsed power systems. This work offers new insights into the development of energy storage materials with high energy density at low electric fields, presenting a promising avenue for the design of efficient, low-voltage electronic components.

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  • Ceramics
  • Ferroelectrics and Multiferroics
  • Mechanical and Thermal Energy Storage
  • Materials Science
  • Perovskites
  • Materials Engineering

Data availability

The data supporting this study are available from the corresponding authors upon reasonable request.

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Authors and Affiliations

  1. School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi’an 710021, China

    Ping Wang, Ning Chen, Shizhong Xie, Zhanhang Zhang & Qibin Yuan

Contributions

Ping Wang: Data Curation, Data Curation, Writing-Reviewing, Supervision and Editing. Ning Chen: Data Curation. Shizhong Xie: Data Curation. Zhanhang Zhang: Data Curation. Qibin Yuan: Conceptualization, Methodology, Writing-Reviewing and Editing.

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Correspondence to Ping Wang.

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Appendix

Appendix

Finite element simulation

The characteristics of the dielectric breakdown process were modeled utilizing the finite element method, as illustrated by the following equation:

P \left( {u,v \to u^{\prime},v^{\prime}} \right) = A\frac{{\left( {\phi_{{u^{\prime}v^{\prime}}} } \right)^{k} }}{{\sum \left( {\phi_{{u^{\prime}v^{\prime}}} } \right)^{k} }} + B\frac{{\left( {\phi_{{u^{\prime}v^{\prime}}} } \right)}}{{\phi_{0} }} + C

where P is the probability of electrical tree development, φ0 is the threshold electric potential, and k denotes the fractal dimension, which is taken as 3 in this study. The coordinates (u, v) and (u′, v′) represent the positions of the breakdown and non-breakdown points, respectively. The first term on the right-hand side of the equation corresponds to the development direction of the electrical tree. The second term reflects the difficulty of electrical tree growth, while the third term pertains to the dielectric properties of the material. The coefficients A, B, and C are the weighting factors for each respective term.The characteristics of the dielectric breakdown process were modeled utilizing the finite element method, as illustrated by the following equation:

P \left( {u,v \to u^{\prime},v^{\prime}} \right) = A\frac{{\left( {\phi_{{u^{\prime}v^{\prime}}} } \right)^{k} }}{{\sum \left( {\phi_{{u^{\prime}v^{\prime}}} } \right)^{k} }} + B\frac{{\left( {\phi_{{u^{\prime}v^{\prime}}} } \right)}}{{\phi_{0} }} + C

where P is the probability of electrical tree development, φ0 is the threshold electric potential, and k denotes the fractal dimension, which is taken as 3 in this study. The coordinates (u, v) and (u′, v′) represent the positions of the breakdown and non-breakdown points, respectively. The first term on the right-hand side of the equation corresponds to the development direction of the electrical tree. The second term reflects the difficulty of electrical tree growth, while the third term pertains to the dielectric properties of the material. The coefficients A, B, and C are the weighting factors for each respective term.

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Wang, P., Chen, N., Xie, S. et al. Enhancing Energy Storage Density of NBT-Based Ceramics at Low Electric Fields via Synergistic Doping and Microstructural Optimization. J Mater Sci: Mater Electron 36, 1228 (2025). https://doi.org/10.1007/s10854-025-15346-1

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