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H-M-CVD-Based Fabrication of Binder-Free Heterostructured Manganese–Copper–Sulfide Asymmetric Device: Supercapacitive Performance

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Abstract

Transition metal sulfides are a prevailing supercapacitive electrode material because of their redox activity, potentially addressing global energy demands while minimizing environmental pollution. Here, binder-free manganese copper sulfide (MnS-CuS) electrode material was synthesized via a low-cost homemade chemical vapor deposition (H-M-CVD) technique, which significantly decreased the synthesis time by providing high purity, uniform growth, reduced agglomeration, and superior electrochemical performance. X-ray diffraction verified the polycrystalline nature of the electrode material, along with the presence of microstrains and lattice defects that promote rapid charge diffusion. The MnS-CuS electrode material with high surface area (97.48 m2/g), mesoporous structure, and greater active sites enables efficient ion transport to enhance electrochemical performance. The MnS-CuS electrode material exhibited high values of specific capacitance (2011 F/g), energy density (34.5 Wh/kg), and power density (1296 W/kg). It retained 93% of its capacitance after 10,000 cycles with a coulombic efficiency of 97%. An asymmetric supercapacitor assembled with this electrode material achieved a specific capacitance of 929 F/g (at 1 A/g), energy density of 44 Wh/kg, and power density of 3189 W/kg, demonstrating that the synthesized MnS-CuS electrode material can be potentially used for sustainable energy storage systems.

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  • Carbon Materials
  • Hydrogen storage materials
  • Porous Materials
  • Supercapacitors
  • Transition Metal Dichalcogenides
  • Materials for Devices

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Acknowledgments

The manuscript entitled “H-M-CVD based fabrication of binder-free heterostructured manganese-copper-sulfide asymmetric device: supercapacitive performance” is done at the Plasma Processing of Electrode Materials Lab, Department of Physics, Government College University Faisalabad, Pakistan.

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  1. Plasma Processing of Electrode Materials Lab, Department of Physics, Government College University Faisalabad, Faisalabad, 38000, Pakistan

    Noman Ayub, Ijaz Ahmad Khan & Amjad Farid

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Correspondence to Ijaz Ahmad Khan.

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The researchers have officially lodged the research paper under the title “H-M-CVD based fabrication of binder-free heterostructured manganese-copper-sulfide asymmetric device: supercapacitive performance”. All of them acknowledged having no contradiction of interest, no monetary assistance, and no link within the last 10 years associated with the subject.

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Ayub, N., Khan, I.A. & Farid, A. H-M-CVD-Based Fabrication of Binder-Free Heterostructured Manganese–Copper–Sulfide Asymmetric Device: Supercapacitive Performance. J. Electron. Mater. (2025). https://doi.org/10.1007/s11664-025-12163-4

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Keywords

  • MnS-CuS
  • polycrystalline
  • nanoplates
  • energy density
  • power density

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