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Evaluation of Crystallization Kinetics, Thermal Stability, and Glass-Forming Ability in Glassy Se-Ge-Ga-Sb Chalcogenide Alloys

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Abstract

Bulk Se49.94Ge31.38Ga7.38Sb11.30 glassy alloys have been obtained by a quenching technique. Se49.94Ge31.38Ga7.38Sb11.30 amorphous nature was verified by x-ray diffraction analysis. The composition of the prepared sample was obtained using energy dispersive x-spectroscopy. The differential scanning calorimeter technique has been used under non-isothermal conditions to determine different characteristic temperatures, such as the glass transition temperature, Tg, on-set and peak crystallization temperatures, Tc and Tp, respectively, and melting temperature, Tm , and found to vary with the heating rates. Differential scanning calorimetry has been used at various heating rates (2, 10, 15, 20, and 25 K/min), and the various kinetic parameters, such as activation energy of glass transition (Eg), activation energy of crystallization (Ec), reduced glass transition temperature (Trg), and Hruby number (Kgl), analyzed for the investigated Se49.94Ge31.38Ga7.38Sb11.30. Different empirical approaches were applied to determine the apparent glass transition activation energy (Eg), and crystallization activation energy (Ec).

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  • Characterization and Analytical Technique
  • Glass
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  • Materials Chemistry
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Authors and Affiliations

  1. Physics Department, Faculty of Education and Science, Saba Region University, Mareb, Yemen

    A. M. Alrebati  (AL-Ribaty)

  2. Semiconductor lab, Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt

    A. M. Shakra

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Correspondence to A. M. Alrebati  (AL-Ribaty).

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Alrebati, A.M., Shakra, A.M. Evaluation of Crystallization Kinetics, Thermal Stability, and Glass-Forming Ability in Glassy Se-Ge-Ga-Sb Chalcogenide Alloys. J. Electron. Mater. (2025). https://doi.org/10.1007/s11664-025-12153-6

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  • DOI  https://doi.org/10.1007/s11664-025-12153-6

Keywords

  • Chalcogenide glasses
  • differential scanning calorimetry
  • crystallization
  • Se-Ge-Ga-Sb

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