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Ultraviolet pulse-driven neuromorphic device for pattern recognition

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Abstract

Neuromorphic devices that emulate sensory processing and pattern recognition are increasingly important in advancing artificial vision systems. Wide-bandgap materials like ZnO, known for their ability to absorb UV light and generate detectable photocurrent under an external bias, offer promising capabilities for such devices. In this study, a bilayer structure of defect-induced and nearly stoichiometric ZnO was used, and the ability of the device to recognise images was investigated. The set and reset voltages of the bilayer device was found to be lower than that of the single layer device, indicating the easy formation and rupture of the conductive filament. This device showed UV light-induced synaptic plasticity, exhibiting a short-term to long-term memory transition by optical stimuli similar to the Atkinson-Shiffrin multistore model. The bilayer device exhibited good optical PPF and high photosensitivity of 3208% for a single pulse of 1 s width. The neural network simulation using the characteristic curve of the device showed better learning accuracy of more than 95% with a matrix of less confusion. These measurements provide promising results for an artificial visual system, demonstrating the device’s efficiency in capturing and processing light information, potentially mimicking the capabilities of natural vision systems. We have further demonstrated a ZnO bilayer transparent flexible memristor using ITO as both the bottom and top electrodes on a PET substrate.

Data availability

The data supporting the findings of this study are available in the supplementary material. The data will be made available upon request from the corresponding author (aldrin@cusat.ac.in).

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Acknowledgements

AJ acknowledges the Cochin University of Science and Technology, Kerala, India, for the research fellowship. PSS would like to thank Rashtriya Uchchatar Shiksha Abhiyan (RUSA), Government of India, for financial support. The authors acknowledge DST-FIST for FE-SEM, ellipsometry and XRD facility at the Department of Physics, Cochin University of Science and Technology, Kochi, Kerala, India.

Funding

This work was funded by Rashtriya Uchchatar Shiksha Abhiyan

Author information

Authors and Affiliations

  1. Department of Physics, Cochin University of Science and Technology, Kochi, Kerala, 682 022, India

    Anjala Jayaraj, G. Arun & Aldrin Antony

  2. International School of Photonics, Cochin University of Science and Technology, Kochi, Kerala, 682 022, India

    P. S. Subin & K. J. Saji

  3. Centre of Excellence in Advanced Materials, Cochin University of Science and Technology, Kochi, Kerala, 682 022, India

    K. J. Saji & Aldrin Antony

Contributions

The authors AJ and PSS have contributed to preparing the manuscript. The materials preparation, device fabrication, data collection, interpretation and the first draft of the manuscript construction were written by AJ. AG contributed to the simulation. KJS contributed to the data interpretation and supervision of the manuscript. AA contributed to the conceptualisation, supervision, data curation, writing a review and editing of the manuscript. All authors have read and approved the final manuscript for publication.

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Correspondence to Aldrin Antony.

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Jayaraj, A., Subin, P.S., Arun, G. et al. Ultraviolet pulse-driven neuromorphic device for pattern recognition. J Mater Sci: Mater Electron 36, 1224 (2025). https://doi.org/10.1007/s10854-025-15318-5

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