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  • Research Direction: Materials Science
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Journal of Electronic Materials

Journal ISSN: 1543-186X,0361-5235

JCR: Q3

Impact Factor: 2.2

Articles

Thermoelectric Transport Properties of Monolayer GaN Semiconductor

Jie He, Guozhen Zhao, Jianhua Liu, Tao Zhang & Zhenming Xu
Published: 11 July 2025
DOI:https://doi.org/10.1007/s11664-025-12157-2
Keywords:Monolayer GaN,thermoelectric figure-of-merit,density-functional theory,thermoelectric materials

Evaluation of Crystallization Kinetics, Thermal Stability, and Glass-Forming Ability in Glassy Se-Ge-Ga-Sb Chalcogenide Alloys

A. M. Alrebati (AL-Ribaty) & A. M. Shakra
Published: 11 July 2025
DOI:https://doi.org/10.1007/s11664-025-12153-6
Keywords:Chalcogenide glasses,differential scanning calorimetry,crystallization,Se-Ge-Ga-Sb

Engineered Spherical Silver Powders for Low-Resistance Sintered Conductive Pastes

Xinran Wang, Weigang Ma, Yongming Hu, Huabin Yang, Junsheng Yang, Chanatip Samart, Nguyen-Minh-An Tran, Suwadee Kongparakul, Junfeng Wang, Hua Tan & Haibo Zhang
Published: 12 July 2025
DOI:https://doi.org/10.1007/s11664-025-12156-3
Keywords:Spherical silver powder,liquid-phase reduction,morphology control,conductive pastes,sheet resistance,adhesion strength

Polarization-Selective and Tunable Metal-Dielectric (Al-Al2O3) Multilayer Negative Index Metamaterial Absorber

Monu Nath Baitha, S. Shankar, Santosh Kumar, Kamal Kishor & Kyoungsik Kim
opical Collection: Electronic Packaging and Interconnection Materials 2025
Published: 12 July 2025
DOI:https://doi.org/10.1007/s11664-025-12137-6
Keywords:Multilayer,polarization-selective,metamaterial,plasmonic,negative refractive index

Modeling and Optimization of a High-Efficiency AgCdF3/BiFeO3-Based Multilayer Photovoltaic Structure Using SCAPS-1D

Venkateswarlu Ganapavarapu & Umakanta Nanda
Published: 12 July 2025
DOI:https://doi.org/10.1007/s11664-025-12158-1
Keywords:Stratified perovskite multiferroic solar cell (SPMSC),multiferroic materials (BiFeO3),(AgCdF3),semiconductor device simulation and modeling,SPMSC,output parameters,SCAPS-1D simulator

An Ultrahigh-Voltage SiC Superjunction MOSFET with Split Dummy Gate for Improving Switching and Short-Circuit Capability

Lixin Geng, Ruifeng Yue & Yan Wang
Published: 12 July 2025
DOI:https://doi.org/10.1007/s11664-025-12170-5
Keywords:4H-SiC superjunction (SJ) MOSFET,ultrahigh-voltage (UHV),specific on-resistance (R on, sp),switching characteristic,short-circuit capability

Fabulous sensing of N,N-Dimethylformamide (DMF) Vapor Using Hydrothermally Prepared Zinc Oxide/Graphene Nanoplatelets Nanocomposite

Abbas Bagheri Khatibani, Somayeh Saadat Niavol, Samaneh Rasouli Jamnani, Hossain Milani Moghaddam & Alireza Azadbar
Published: 14 July 2025
DOI:https://doi.org/10.1007/s11664-025-12124-x
Keywords:Zinc oxide,graphene nanoplatelets,gas sensor,DMF vapor

H-M-CVD-Based Fabrication of Binder-Free Heterostructured Manganese–Copper–Sulfide Asymmetric Device: Supercapacitive Performance

Noman Ayub, Ijaz Ahmad Khan & Amjad Farid
Topical Collection: 7th International Conference on Materials Science and Nanotechnology 2025
Published: 14 July 2025
DOI:https://doi.org/10.1007/s11664-025-12163-4
Keywords:MnS-CuS,polycrystalline,nanoplates,energy density,power density

Introduction

Journal of Electronic Materials is a peer-reviewed scientific journal that publishes research and developments related to materials used in electronic and optoelectronic devices. It covers topics such as semiconductors, electronic ceramics, thin films, and nanostructured materials. The journal provides a platform for researchers, engineers, and scientists to share innovations in the synthesis, processing, characterization, and application of electronic materials. It is published by Springer and is recognized for its contributions to both fundamental studies and applied technologies in the field.

Editorial Board

Editor-In-Chief

Wojciech M. Jadwisienczak, Ohio University, Athens, USA

Senior Editor

John D. Baniecki, SLAC National Accelerator Laboratory, Stanford University, Stanford, USA

Section Editors

  • Dong-Hau Kuo, National Taiwan University of Science and Technology, Taipei, Taiwan
  • Dan Ricinschi, Institute of Science Tokyo, Tokyo, Japan
  • M.T. Sebastian, National Institute for Interdisciplinary Science and Technology, Thiruvananthapuram, India
  • Cheuk-Wai Tai, Arrhenius Laboratory, Stockholm University, Stockholm, Sweden

Editorial Oversight Committee

  • Katayun Barmak, Columbia University, New York, USA
  • Thomas Bieler, Michigan State University, East Lansing, USA
  • Ioannis (John) Kymissis, Columbia University, New York, USA
  • Robert Kaplar, Sandia National Laboratories, Albuquerque, USA
  • Yuping Zeng, University of Delaware, Newark, USA

Associate Editors

  • Ganesh Balakrishnan, University of New Mexico, Albuquerque, USA
  • L.J. Brillson, The Ohio State University, Columbus, USA
  • Tomasz Brylewski, AGH University of Krakow, Krakow, Poland
  • Sinn-wen Chen, National Tsing Hua University, Hsinchu, Taiwan
  • Shaowei Chen, University of California, Santa Cruz, Santa Cruz, USA
  • Deborah Chung, SUNY Buffalo State University, Buffalo, USA
  • Yu Duan, Jilin University, Changchun, China
  • Kathleen Dunn, SUNY Polytechnic Institute, Utica, USA
  • Kurt G. Eyink, Air Force Research Laboratory, Wright-Patterson Air Force Base, USA
  • Tsang-Tse Fang, National Cheng Kung University, Tainan, Taiwan
  • Darrel Frear, NXP (Germany), Hamburg, Germany
  • Junfeng Gao, Dalian University of Technology, Dalian, China
  • Satyabrata Jit, Indian Institute of Technology BHU, Varanasi, India
  • Pei-Cheng Ku, University of Michigan–Ann Arbor, Ann Arbor, USA
  • Koko Kwok-ho Lam, University of Glasgow, Glasgow, United Kingdom
  • Tae-Kyu Lee, Cisco Systems (United States), San Jose, USA
  • Ching-Ting Lee, National Cheng Kung University, Tainan, Taiwan
  • Pei-Wen Li, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
  • Fangyang Liu, Central South University, Changsha, China
  • Ramesh Chandra Mallik, Indian Institute of Science Bangalore, Bengaluru, India
  • Arturo Morales-Acevedo, Center for Research and Advanced Studies of the National Polytechnic Institute, Mexico City, Mexico
  • Amin Nozariasbmarz, Rowan University, Glassboro, USA
  • Paul R. Ohodnicki, University of Pittsburgh, Pittsburgh, USA
  • Doo Seok Jeong, Korea Institute of Science and Technology, Seoul, Korea (Republic of)
  • Jens W. Tomm, Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy, Berlin, Germany
  • Huan Tran, Georgia Institute of Technology, Atlanta, USA
  • Rahul Vaish, Indian Institute of Technology Mandi, Mandi, India
  • Holger Von Wenckstern, Leipzig University, Leipzig, Germany
  • Xinhui Xia, Zhejiang University, Hangzhou, China
  • Shijie Xu, University of Hong Kong, Hong Kong, Hong Kong
  • Rui-Qin Zhang, City University of Hong Kong, Hong Kong, Hong Kong

Aims & Scope

  • Presents methods for fabricating materials and evaluating their chemical, physical, electronic, and optical properties.
  • Describes computational methodologies in the study of electronic materials, including machine learning–guided materials.
  • Publishes research on specific areas such as materials for state-of-the-art transistors, quantum spintronics, nanotechnology, metallization, and superconductivity.
  • Covers applications in detectors, emitters, quantum information science and technology, energy, and electronic packaging.
  • Strives to publish articles of interest to both specialists and non-specialists in the field of electronic materials.
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